View NAND04G-B_5540777.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1/57 preliminary data october 2005 this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change wit hout notice. nand01g-b, nand02g-b, NAND04G-B, nand08g-b 1 gbit, 2 gbit, 4 gbit, 8 gbit 2112 byte/1056 word page, 1.8v/3v, nand flash memory features summary high density nand flash memories ? up to 8 gbit memory array ? up to 64mbit spare area ? cost effective solutions for mass storage applications nand interface ? x8 or x16 bus width ? multiplexed address/ data ? pinout compatibility for all densities supply voltage ? 1.8v device: v dd = 1.7 to 1.95v ? 3.0v device: v dd = 2.7 to 3.6v page size ? x8 device: (2048 + 64 spare) bytes ? x16 device: (1024 + 32 spare) words block size ? x8 device: (128k + 4k spare) bytes ? x16 device: (64k + 2k spare) words page read / program ? random access: 25s (max) ? sequential access: 50ns (min) ? page program time: 300s (typ) copy back program mode ? fast page copy without external buffering cache program and cache read modes ? internal cache register to improve the program and read throughputs fast block erase ? block erase time: 2ms (typ) status register electronic signature chip enable ?don?t care? ? for simple interface with microcontroller serial number option figure 1. packages data protection ? hardware and software block locking ? hardware program/erase locked during power transitions data integrity ? 100,000 program/erase cycles ? 10 years data retention rohs compliance ? lead-free components are compliant with the rohs directive development tools ? error correction code software and hardware models ? bad blocks manage ment and wear leveling algorithms ? pc demo board with simulation software ? file system os native reference software ? hardware simulation models tsop48 12 x 20mm vfbga63 9.5 x 12 x 1mm tfbga63 9.5 x 12 x 1.2mm fbga
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 2/57 table 1. product list note: x16 organization only available for mcp reference part number nand01g-b nand01gr3b nand01gw3b nand01gr4b nand01gw4b nand02g-b nand02gr3b nand02gw3b nand02gr4b nand02gw4b NAND04G-B nand04gr3b nand04gw3b nand04gr4b nand04gw4b nand08g-b nand08gr3b nand08gw3b nand08gr4b nand08gw4b
3/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b table of contents features summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 figure 1. packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 table 1. product list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 table 2. product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 figure 2. logic block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 figure 3. logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 3. signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 figure 4. tsop48 connections, x8 devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 figure 5. fbga63 connections, x8 devices (top view through package) . . . . . . . . . . . . . . . . . . . 11 figure 6. fbga63 connections, x16 devices (top view through package) . . . . . . . . . . . . . . . . . . 12 memory array organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 bad blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 4. valid blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 7. memory array organization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 inputs/outputs (i/o0-i/o7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 inputs/outputs (i/o8-i/o15). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 address latch enable (al) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 command latch enable (cl) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 chip enable (e ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 read enable (r ).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 power-up read enable, lock/unlock enable (prl). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 write enable (w ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 write protect (wp ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 ready/busy (rb ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 v dd supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 v ss ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 bus operations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 command input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 address input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 data output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 write protect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 table 5. bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 table 6. address insertion, x8 devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 6 table 7. address insertion, x16 devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 table 8. address definitions, x8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 4/57 table 9. address definitions, x16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 command set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 table 10. commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 device operations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 read memory array. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 random read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 page read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 8. read operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 9. random data output during sequential data output. . . . . . . . . . . . . . . . . . . . . . . . . . . 20 cache read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 10.cache read operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 page program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 sequential input. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 random data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 figure 11.page program operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 figure 12.random data input during sequential data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 copy back program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 table 11. copy back program x8 addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 table 12. copy back program x16 addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 figure 13.copy back program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 figure 14.page copy back program with random data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 cache program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 15.cache program operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 block erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 16.block erase operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 read status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 write protection bit (sr7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 p/e/r controller and cache ready/busy bit (sr6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 p/e/r controller bit (sr5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 cache program error bit (sr1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 error bit (sr0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 sr4, sr3 and sr2 are reserved . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 table 13. status register bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 read electronic signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 table 14. electronic signature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 table 15. electronic signature byte/word 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 data protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 blocks lock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 blocks unlock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 figure 17.blocks unlock operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 blocks lock-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 block lock status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
5/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b figure 18.read block lock status operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 table 16. block lock status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 figure 19.block protection state diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 4 software algorithms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 bad block management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 block replacement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 table 17. block failure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 figure 20.bad block management flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 figure 21.garbage collection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 garbage collection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 wear-leveling algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 error correction code. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 figure 22.error detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 hardware simulation models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37 behavioral simulation models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 ibis simulations models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 program and erase times and endurance cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 table 18. program, erase times and program erase endurance cycles . . . . . . . . . . . . . . . . . . . 38 maximum rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 table 19. absolute maximum ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 dc and ac parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 table 20. operating and ac measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 table 21. capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 table 22. dc characteristics, 1.8v devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 figure 23.equivalent testing circuit for ac characteristics measurement. . . . . . . . . . . . . . . . . . . 40 table 23. dc characteristics, 3v devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1 table 24. ac characteristics for command, address, data input . . . . . . . . . . . . . . . . . . . . . . . . . 42 table 25. ac characteristics for operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 figure 24.command latch ac waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 figure 25.address latch ac waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 figure 26.data input latch ac waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 figure 27.sequential data output after read ac waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 figure 28.read status register ac waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 figure 29.read electronic signature ac waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 figure 30.page read operation ac waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 figure 31.page program ac waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 figure 32.block erase ac waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 figure 33.reset ac waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 ready/busy signal electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 figure 34.ready/busy ac waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 0 figure 35.ready/busy load circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 figure 36.resistor value versus waveform timings for ready/busy signal . . . . . . . . . . . . . . . . 50
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 6/57 data protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 figure 37.data protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 figure 38.tsop48 - 48 lead plastic thin small outline, 12 x 20 mm, package outline . . . . . . . . 52 table 26. tsop48 - 48 lead plastic thin small outline, 12 x 20 mm, package mechanical data . 52 figure 39.vfbga63 9.5x12mm - 6x8 active ball array, 0.80mm pitch, package outline . . . . . . . . 53 table 27. vfbga63 9.5x12mm - 6x8 active ball array, 0.80mm pitch, package mechanical data 53 figure 40.tfbga63 9.5x12mm - 6x8 active ball array, 0.80mm pitch, package outline . . . . . . . . 54 table 28. tfbga63 9.5x12mm - 6x8 active ball array, 0.80mm pitch, package mechanical data 54 part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 table 29. ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 revision history. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 table 30. document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
7/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b summary description the nand flash 2112 byte/ 1056 word page is a family of non-volatile flash memories that uses nand cell technology. the devices range from 1 gbit to 8 gbits and operate with either a 1.8v or 3v voltage supply. the size of a page is either 2112 bytes (2048 + 64 spare) or 1056 words (1024 + 32 spare) depending on whether the device has a x8 or x16 bus width. the address lines are multiplexed with the data in- put/output signals on a multiplexed x8 or x16 in- put/output bus. this interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint. each block can be programmed and erased over 100,000 cycles. to extend the lifetime of nand flash devices it is strongly recommended to imple- ment an error correction code (ecc). the devices have hardware and software security features: a write protect pin is available to give a hardware protection against program and erase operations. a block locking scheme is available to provide user code and/or data protection. the devices feature an open-drain ready/busy output that can be used to identify if the program/ erase/read (p/e/r) controller is currently active. the use of an open-drain output allows the ready/ busy pins from several memories to be connected to a single pull-up resistor. a copy back program command is available to optimize the management of defective blocks. when a page program operation fails, the data can be programmed in another page without hav- ing to resend the data to be programmed. each device has cache program and cache read features which improve the program and read throughputs for large files. during cache program- ming, the device loads the data in a cache regis- ter while the previous data is transferred to the page buffer and programmed into the memory ar- ray. during cache reading, the device loads the data in a cache register while the previous data is transferred to the i/o buffers to be read. all devices have the chip enable don?t care fea- ture, which allows code to be directly downloaded by a microcontroller, as chip enable transitions during the latency time do not stop the read oper- ation. all devices have the option of a unique identifier (serial number), which allows each device to be uniquely identified. the unique identifier options is subject to an nda (non disclosure agreement) and so not described in the datasheet. for more details of this option contact your nearest st sales office. the devices are available in the following packag- es: tsop48 (12 x 20mm) for all products vfbga63 (9.5 x 12 x 1mm, 0.8mm pitch) for 1gb products tfbga63 (9.5 x 12 x 1.2mm, 0.8mm pitch) for 2gb dual die products for information on how to order these options refer to table 29., ordering information scheme . de- vices are shipped from the factory with block 0 al- ways valid and the memory content bits, in valid blocks, erased to ?1?. see table 2., product description , for all the de- vices available in the family.
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 8/57 table 2. product description 1. dual die devices only 2. x16 organization only available for mcp figure 2. logic block diagram reference part number density bus width page size block size memory array operating volta ge timings packages random access (max) sequential access (min) page program (typ) block erase (typ) nand01g-b nand01gr3b 1gbit x8 2048+64 bytes 128k+4k bytes 64 pages x 1024 blocks 1.7 to 1.95v 25s 60ns 300s 2ms tsop48 vfbga63 nand01gw3b 2.7 to 3.6v 25s 50ns 300s nand01gr4b x16 (2) 1024+32 words 64k+2k words 1.7 to 1.95v 25s 60ns 300s nand01gw4b 2.7 to 3.6v 25s 50ns 300s nand02g-b nand02gr3b 2gbit x8 2048+64 bytes 128k+4k bytes 64 pages x 2048 blocks 1.7 to 1.95v 25s 60ns 300s 2ms tsop48 tfbga63 (1) nand02gw3b 2.7 to 3.6v 25s 50ns 300s nand02gr4b x16 (2) 1024+32 words 64k+2k words 1.7 to 1.95v 25s 60ns 300s nand02gw4b 2.7 to 3.6v 25s 50ns 300s NAND04G-B nand04gr3b 4gbit x8 2048+64 bytes 128k+4k bytes 64 pages x 4096 blocks 1.7 to 1.95v 25s 60ns 300s 2ms tsop48 nand04gw3b 2.7 to 3.6v 25s 50ns 300s nand04gr4b x16 (2) 1024+32 words 64k+2k words 1.7 to 1.95v 25s 60ns 300s nand04gw4b 2.7 to 3.6v 25s 50ns 300s nand08g-b nand08gr3b 8gbit x8 2048+64 bytes 128k+4k bytes 64 pages x 8192 blocks 1.7 to 1.95v 25s 60ns 300s 2ms tsop48 nand08gw3b 2.7 to 3.6v 25s 50ns 300s nand08gr4b x16 (2) 1024+32 words 64k+2k words 1.7 to 1.95v 25s 60ns 300s nand08gw4b 2.7 to 3.6v 25s 50ns 300s address register/counter command interface logic p/e/r controller, high voltage generator wp i/o buffers & latches i/o8-i/o15, x16 e w ai09373b r y decoder page buffer nand flash memory array x decoder i/o0-i/o7, x8/x16 command register cl al cache register rb prl
9/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b figure 3. logic diagram note: x16 organization only available for mcp table 3. signal names ai09372b w i/o8-i/o15, x16 v dd nand flash e v ss wp al cl rb r i/o0-i/o7, x8/x16 prl i/o8-15 data input/outputs for x16 devices i/o0-7 data input/outputs, address inputs, or command inputs for x8 and x16 devices al address latch enable cl command latch enable e chip enable r read enable rb ready/busy (open-drain output) w write enable wp write protect prl power-up read enable, lock/unlock enable v dd supply voltage v ss ground nc not connected internally du do not use
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 10/57 figure 4. tsop48 connections, x8 devices i/o3 i/o2 i/o6 r rb nc i/o4 i/o7 ai11750 nand flash (x8) 12 1 13 24 25 36 37 48 e i/o1 nc nc nc nc nc nc nc wp w nc nc nc v ss v dd al nc nc cl nc i/o5 nc nc nc i/o0 nc nc nc nc prl v dd nc nc nc v ss nc nc nc nc
11/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b figure 5. fbga63 connections, x8 devices (top view through package) ai09376 i/o7 wp i/o4 i/o3 nc v dd i/o5 v dd nc h v ss i/o6 d e cl c nc nc b du nc w nc a 8 7 6 5 4 3 2 1 nc nc nc nc g f e i/o0 al du nc nc nc nc nc nc nc nc nc nc v ss nc nc nc nc rb i/o2 du nc du i/o1 10 9 r nc prl nc v ss du du du du du du du du du du du m l k j
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 12/57 figure 6. fbga63 connections, x16 devices (top view through package) ai09377 i/o15 wp i/o4 i/o11 i/o10 v dd i/o6 v dd i/o3 h v ss i/o13 d e cl c nc nc b du nc w nc a 8 7 6 5 4 3 2 1 nc nc nc nc g f e i/o1 al du nc nc nc nc nc nc i/o7 i/o5 i/o14 i/o12 v ss nc nc nc nc rb i/o2 du i/o0 du i/o9 10 9 r nc prl i/o8 v ss du du du du du du du du du du du m l k j
13/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b memory array organization the memory array is made up of nand structures where 32 cells are connected in series. the memory array is organized in blocks where each block contains 64 pages. the array is split into two areas, the main area and the spare area. the main area of the array is used to store data whereas the spare area is typically used to store error correction codes, software flags or bad block identification. in x8 devices the pages are split into a 2048 byte main area and a spare area of 64 bytes. in the x16 devices the pages are split into a 1,024 word main area and a 32 word spare area. refer to figure 7., memory array organization . bad blocks the nand flash 2112 byte/ 1056 word page de- vices may contain bad blocks, that is blocks that contain one or more invalid bits whose reliability is not guaranteed. additional bad blocks may devel- op during the lifetime of the device. the bad block information is written prior to ship- ping (refer to bad block management section for more details). table 4. shows the minimum number of valid blocks in each device. the values shown include both the bad blo cks that are pres ent when the de- vice is shipped and the bad blocks that could de- velop later on. these blocks need to be managed using bad blocks management, block replacement or error correction codes (refer to software algo- rithms section). table 4. valid blocks figure 7. memory array organization density of device min max 8 gbits 8032 8192 4 gbits 4016 4096 2 gbits 2008 2048 1gbit 1004 1024 ai09854 block = 64 pages page = 2112 bytes (2,048 + 64) 2,048 bytes 2048 bytes s p a re a re a 64 bytes block 8 bits 64 bytes 8 bits page page buffer, 2112 bytes block = 64 pages page = 1056 words (1024 + 32) 1,024 words 1024 words s p a re a re a main area 32 words 16 bits 32 words 16 bits page buffer, 1056 words block page x8 devices x16 devices main area
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 14/57 signal descriptions see figure 3., logic diagram , and table 3., signal names , for a brief overview of the sig- nals connected to this device. inputs/outputs (i/o0-i/o7). input/outputs 0 to 7 are used to input the selected address, output the data during a read operation or input a command or data during a write operation. the inputs are latched on the rising edge of write enable. i/o0-i/ o7 are left floating when the device is deselected or the outputs are disabled. inputs/outputs (i/o8-i/o15). input/outputs 8 to 15 are only available in x16 devices. they are used to output the data during a read operation or input data during a write operation. command and address inputs only require i/o0 to i/o7. the inputs are latched on the rising edge of write enable. i/o8-i/o15 are left floating when the de- vice is deselected or the outputs are disabled. address latch enable (al). the address latch enable activates the latching of the address inputs in the command interface. when al is high, the inputs are latched on the rising edge of write en- able. command latch enable (cl). the command latch enable activates the latching of the com- mand inputs in the command interface. when cl is high, the inputs are latched on the rising edge of write enable. chip enable (e ). the chip enable input acti- vates the memory control logic, input buffers, de- coders and sense amplifiers. when chip enable is low, v il , the device is selected. if chip enable goes high, v ih , while the device is busy, the device remains selected and does not go into standby mode. read enable (r ). the read enable pin, r , con- trols the sequential data output during read oper- ations. data is valid t rlqv after the falling edge of r . the falling edge of r also increments the inter- nal column address counter by one. power-up read enable, lock/unlock enable (prl). the power-up read enable, lock/unlock enable input, prl, is used to enable and disable the lock mechanism. when prl is high, v ih , the device is in block lock mode. if the power-up read enable, lock/unlock en- able input is not required, the prl pin should be left unconnected (not connected) or connected to v ss . write enable (w ). the write enable input, w , controls writing to the command interface, input address and data latches. both addresses and data are latched on the rising edge of write en- able. during power-up and power-down a recovery time of 10s (min) is required before the command in- terface is ready to accept a command. it is recom- mended to keep write enable high during the recovery time. write protect (wp ). the write protect pin is an input that gives a hardware protection against un- wanted program or erase operations. when write protect is low, v il , the device does not accept any program or erase operations. it is recommended to keep the write protect pin low, v il , during power-up and power-down. ready/busy (rb ). the ready/busy output, rb , is an open-drain output that can be used to identify if the p/e/r controller is currently active. when ready/busy is low, v ol , a read, program or erase operation is in progress. when the operation completes ready/busy goes high, v oh . the use of an open-drain output allows the ready/ busy pins from several memories to be connected to a single pull-up resistor. a low will then indicate that one, or more, of the memories is busy. refer to the ready/busy signal electrical charac- teristics section for details on how to calculate the value of the pull-up resistor. v dd supply voltage. v dd provides the power supply to the internal core of the memory device. it is the main power supply for all operations (read, program and erase). an internal voltage detector disables all functions whenever v dd is below 2.5v (for 3v devices) or 1.5v (for 1.8v devices) to protect the device from any involuntary program/erase during power-tran- sitions. each device in a system should have v dd decou- pled with a 0.1f capacitor. the pcb track widths should be sufficient to carry the required program and erase currents v ss ground. ground, v ss, is the reference for the power supply. it must be connected to the sys- tem ground.
15/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b bus operations there are six standard bus operations that control the memory. each of these is described in this section, see table 5., bus operations , for a sum- mary. typically, glitches of less than 5 ns on chip en- able, write enable and read enable are ignored by the memory and do not affect bus operations. command input command input bus operations are used to give commands to the memory. commands are ac- cepted when chip enable is low, command latch enable is high, address latch enable is low and read enable is high. they are latched on the ris- ing edge of the write enable signal. only i/o0 to i/o7 are used to input commands. see figure 24. and table 24. for details of the tim- ings requirements. address input address input bus operations are used to input the memory addresses. four bus cycles are required to input the addresses for 1gb devices whereas five bus cycles are required for the 2gb, 4gb and 8gb devices (refer to table 6. and table 7. , ad- dress insertion). the addresses are accepted when chip enable is low, address latch enable is high, command latch enable is low and read enable is high. they are latched on the rising edge of the write enable signal. only i/o0 to i/o7 are used to input addresses. see figure 25. and table 24. for details of the tim- ings requirements. data input data input bus operations are used to input the data to be programmed. data is accepted only when chip enable is low, address latch enable is low, command latch enable is low and read enable is high. the data is latched on the rising edge of the write enable signal. the data is input sequentially using the write enable signal. see figure 26. and table 24. and table 25. for de- tails of the timings requirements. data output data output bus operations are used to read: the data in the memory array, the status register, the lock status, the electronic signature and the unique identifier. data is output when chip enable is low, write en- able is high, address latch enable is low, and command latch enable is low. the data is output sequentially using the read en- able signal. see figure 27. and table 25. for details of the tim- ings requirements. write protect write protect bus operations are used to protect the memory against program or erase operations. when the write protect signal is low the device will not accept program or erase operations and so the contents of the memory array cannot be al- tered. the write protect signal is not latched by write enable to ensure protection even during power-up. standby when chip enable is high the memory enters standby mode, the device is deselected, outputs are disabled and power consumption is reduced. table 5. bus operations note: 1. only for x16 devices. 2. wp must be v ih when issuing a program or erase command. bus operation e al cl r w wp i/o0 - i/o7 i/o8 - i/o15 (1) command input v il v il v ih v ih rising x (2) command x address input v il v ih v il v ih rising x address x data input v il v il v il v ih rising v ih data input data input data output v il v il v il falling v ih x data output data output write protect xxxx x v il xx standby v ih xxx x v il /v dd xx
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 16/57 table 6. address insertion, x8 devices note: 1. any additional address input cycles will be ignored. 2. the fifth cycle is valid for 2gb, 4gb and 8gb devices. a28 is for 2gb devices, a29-a28 are for 4gb devices and a30-a28 for 8g b devices only. table 7. address insertion, x16 devices note: 1. any additional address input cycles will be ignored. 2. the fifth cycle is valid for 2gb, 4gb and 8gb devices. a27 is for 2gb devices, a28-a27 are for 4gb devices and a29-a27 for 8g b devices. bus cycle i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 i/o0 1 st a7 a6 a5 a4 a3 a2 a1 a0 2 nd v il v il v il v il a11 a10 a9 a8 3 rd a19 a18 a17 a16 a15 a14 a13 a12 4 th a27 a26 a25 a24 a23 a22 a21 a20 5 th(2) v il v il v il v il v il a30 a29 a28 bus cycle i/o8- i/o15 i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 i/o0 1 st x a7 a6 a5 a4 a3 a2 a1 a0 2 nd x v il v il v il v il v il a10 a9 a8 3 rd x a18 a17 a16 a15 a14 a13 a12 a11 4 th x a26 a25 a24 a23 a22 a21 a20 a19 5 th(2) x v il v il v il v il v il a29 a28 a27
17/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b table 8. address definitions, x8 table 9. address definitions, x16 address definition a0 - a11 column address a12 - a17 page address a18 - a27 block address 1gb device a18 - a28 block address 2gb device a18 - a29 block address 4gb device a18 - a30 block address 8gb device address definition a0 - a10 column address a11 - a16 page address a17 - a26 block address 1gb device a17 - a27 block address 2gb device a17 - a28 block address 4gb device a17 - a29 block address 8gb device
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 18/57 command set all bus write operations to the device are interpret- ed by the command interface. the commands are input on i/o0-i/o7 and are latched on the rising edge of write enable when the command latch enable signal is high. device operations are se- lected by writing specific commands to the com- mand register. the two-step command sequences for program and erase operations are imposed to maximize data security. the commands are summarized in table 10., commands . table 10. commands note: 1. the bus cycles are only shown for issuing the codes. the cycles required to input the addresses or input/output data are not shown. 2. for consecutive read operations the 00h command does not need to be repeated. 3. only during cache read busy. command bus write operations (1) commands accepted during busy 1 st cycle 2 nd cycle 3 rd cycle 4 th cycle read 00h (2) 30h ? ? random data output 05h e0h ? ? cache read 00h 31h ? ? exit cache read 34h ? ? ? yes (3) page program (sequential input default) 80h 10h ? ? random data input 85h ? ? ? copy back program 00h 35h 85h 10h cache program 80h 15h ? ? block erase 60h d0h ? ? reset ffh ? ? ? yes read electronic signature 90h ? ? ? read status register 70h ? ? ? yes read block lock status 7ah ? ? ? blocks unlock 23h 24h ? ? blocks lock 2ah ? ? ? blocks lock-down 2ch ? ? ?
19/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b device operations the following section gives the details of the de- vice operations. read memory array at power-up the device defaults to read mode. to enter read mode from another mode the read command must be issued, see table 10., commands . once a read command is is- sued, subsequent consecutive read commands only require the confirm command code (30h). once a read command is issued two types of op- erations are available: random read and page read. random read. each time the read command is issued the first read is random read. page read. after the first random read access, the page data (2112 bytes or 1056 words) is transferred to the page buffer in a time of t whbh (refer to table 25. for value). once the transfer is complete the ready/busy signal goes high. the data can then be read out sequentially (from se- lected column address to last column address) by pulsing the read enable signal. the device can output random data in a page, in- stead of the consecutive sequential data, by issu- ing a random data output command . the random data output command can be used to skip some data during a sequential data output. the sequential operation can be resumed by changing the column address of the next data to be output, to the address which follows the ran- dom data output command. the random data output command can be is- sued as many times as required within a page. the random data output command is not accept- ed during cache read operations. figure 8. read operations note: 1. highest address depends on device density. cl e w al r i/o rb 00h ai08657b busy command code data output (sequentially) address input tblbh1 30h command code
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 20/57 figure 9. random data output during sequential data output i/o rb address inputs ai08658 data output busy tblbh1 (read busy time) 00h cmd code 30h address inputs data output 05h e0h 5 add cycles main area spare area col add 1,2 row add 1,2,3 cmd code cmd code cmd code 2add cycles main area spare area col add 1,2 r
21/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b cache read the cache read operation is used to improve the read throughput by reading data using the cache register. as soon as the user starts to read one page, the device automatically loads the next page into the cache register. an cache read operation consists of three steps (see table 10. ): 1. one bus cycle is requir ed to setup the cache read command (the same as the standard read command) 2. four or five (refer to table 6. and table 7. ) bus cycles are then required to input the start address 3. one bus cycle is required to issue the cache read confirm command to start the p/e/r controller. the start address must be at the beginning of a page (column address = 00h, see table 8. and table 9. ). this allows the data to be output unin- terrupted after the latency time (t blbh1 ), see fig- ure 10. the ready/busy signal can be used to monitor the start of the operation. during the latency period the ready/busy signal goes low, after this the ready/ busy signal goes high, even if the device is inter- nally downloading page n+1. once the cache read operation has started, the status register can be read using the read status register command. during the operation, sr5 can be read, to find out whether the internal reading is ongoing (sr5 = ?0?), or has completed (sr5 = ?1?), while sr6 indi- cates whether the cache register is ready to download new data. to exit the cache read operation an exit cache read command must be issued (see table 10. ). if the exit cache read command is issued while the device is internally reading page n+1, page n will still be output, but not page n+1. figure 10. cache read operation i/o rb address inputs ai08661 00h read setup code 31h cache read confirm code busy tblbh1 (read busy time) 1st page data output 2nd page 3rd page last page 34h exit cache read code block n
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 22/57 page program the page program operation is the standard oper- ation to program data to the memory array. gener- ally, data is programmed sequentially, however the device does support random input within a page. the memory array is programmed by page, how- ever partial page progra mming is allowed where any number of bytes (1 to 2112) or words (1 to 1056) can be programmed. the maximum number of consecutive partial page program operations allowed in the same page is eight. after exceeding this a block erase com- mand must be issued before any further program operations can take place in that page. sequential input. to input data sequentially the addresses must be sequential and remain in one block. for sequential input each page program opera- tion consists of five steps (see figure 11. ): 1. one bus cycle is requ ired to setup the page program (sequential input) command (see table 10. ) 2. four or five bus cycles are then required to input the program address (refer to table 6. and table 7. ) 3. the data is then loaded into the data registers 4. one bus cycle is requ ired to issue the page program confirm command to start the p/e/r controller. the p/e/r will only start if the data has been loaded in step 3. 5. the p/e/r controller then programs the data into the array. random data input. during a sequential input operation, the next sequential address to be pro- grammed can be replaced by a random address, by issuing a random data input command. the following two steps are required to issue the com- mand: 1. one bus cycle is required to setup the random data input command (see table 10. ) 2. two bus cycles are then required to input the new column address (refer to table 6. ) random data input can be repeated as often as required in any given page. once the program operation has started the sta- tus register can be read using the read status register command. during program operations the status register will only flag errors for bits set to '1' that have not been successfully programmed to '0'. during the program operation, only the read sta- tus register and reset commands will be accept- ed, all other commands will be ignored. once the program operation has completed the p/ e/r controller bit sr6 is set to ?1? and the ready/ busy signal goes high. the device remains in read status register mode until another valid command is written to the com- mand interface. figure 11. page program operation i/o rb address inputs sr0 ai08659 data input 10h 70h 80h page program setup code confirm code read status register busy tblbh2 (program busy time)
23/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b figure 12. random data input during sequential data input i/o address inputs ai08664 data intput 80h cmd code address inputs data input 85h 5 add cycles main area spare area col add 1,2 row add 1,2,3 cmd code 2 add cycles main area spare area col add 1,2 rb busy tblbh2 (program busy time) sr0 10h 70h confirm code read status register
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 24/57 copy back program the copy back program operation is used to copy the data stored in one page and reprogram it in an- other page. the copy back program operation does not re- quire external memory and so the operation is faster and more efficient because the reading and loading cycles are not r equired. the operation is particularly useful when a portion of a block is up- dated and the rest of the block needs to be copied to the newly assigned block. if the copy back program operation fails an error is signalled in the status register. however as the standard external ecc cannot be used with the copy back program operation bit error due to charge loss cannot be detected. for this reason it is recommended to limit the number of copy back program operations on the same data and or to improve the performance of the ecc. the copy back program operation requires four steps: 1. the first step reads the source page. the operation copies all 1056 words/ 2112 bytes from the page into the data buffer. it requires: ? one bus write cycle to setup the command ? 4 bus write cycles to input the source page address ? one bus write cycle to issue the confirm command code 2. when the device returns to the ready state (ready/busy high), the next bus write cycle of the command is given with the 4 bus cycles to input the target page address. refer to table 11. for the addresses that must be the same for the source and target pages. 3. then the confirm command is issued to start the p/e/r controller. to see the data input cycle for modifying the source page and an example of the copy back program operation refer to figure 13. . a data input cycle to modify a portion or a multiple distant portion of the source page, is shown in fig- ure 14. table 11. copy back program x8 addresses note: 1. dd = dual die table 12. copy back program x16 addresses note: 1. dd = dual die density same address for source and target pages 1 gbit no constraint 2 gbit no constraint 2 gbit dd (1) a28 4 gbit no constraint density same address for source and target pages 1 gbit no constraint 2 gbit a28 2 gbit dd (1) a27 4 gbit no constrain
25/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b figure 13. copy back program note: copy back program is only permitted between odd address pages or even address pages. figure 14. page copy back program with random data input i/o rb source add inputs ai09858b 85h copy back code read code read status register target add inputs tblbh1 (read busy time) busy tblbh2 (program busy time) 00h 10h 70h sr0 busy 35h i/o rb source add inputs ai11001 85h read code target add inputs tblbh1 (read busy time) 00h busy 35h 85h data 2 cycle add inputs data copy back code 10h 70h unlimited number of repetitions busy tblbh2 (program busy time) sr0
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 26/57 cache program the cache program operation is used to improve the programming throughput by programming data using the cache register. the cache pro- gram operation can only be used within one block. the cache register allows new data to be input while the previous data that was transferred to the page buffer is programmed into the memory ar- ray. each cache program operation consists of five steps (refer to figure 15. ): 1. first of all the program setup command is issued (one bus cycle to issue the program setup command then four bus write cycles to input the address), the data is then input (up to 2112 bytes/ 1056 words) and loaded into the cache register. 2. one bus cycle is required to issue the confirm command to start the p/e/r controller. 3. the p/e/r controller then transfers the data to the page buffer. during this the device is busy for a time of t whbh2 . 4. once the data is loaded into the page buffer the p/e/r controller programs the data into the memory array. as soon as the cache registers are empty (after t whbh2 ) a new cache program command can be issued, while the internal programming is still executing. once the program operation has started the sta- tus register can be read using the read status register command. during cache program oper- ations sr5 can be read to find out whether the in- ternal programming is ongoing (sr5 = ?0?) or has completed (sr5 = ?1?) while sr6 indicates wheth- er the cache register is ready to accept new data. if any errors have been detected on the previous page ( page n-1 ), the cache program error bit sr1 will be set to ?1', while if the error has been detect- ed on page n the error bit sr0 will be set to '1?. when the next page (page n) of data is input with the cache program command, t whbh2 is affected by the pending internal programming. the data will only be transferred from the cache register to the page buffer when the pending program cycle is finished and the page buffer is available. if the system monitors the progress of the opera- tion using only the ready/busy signal, the last page of data must be programmed with the page program confirm command (10h). if the cache program confirm command (15h) is used instead, status register bit sr5 must be polled to find out if the last programming is finished before starting any other operations. figure 15. cache program operation note: 1. up to 64 pages can be programmed in one cache program operation. 2. t cachepg is the program time for the last page + the program time for the (last ? 1) th page ? (program command cycle time + last page data loading time). i/o rb address inputs ai08672 80h page program code read status register busy data inputs 15h cache program code 80h page program code 15h cache program confirm code busy last page tblbh5 (cache busy time) tblbh5 tcachepg sr0 70h 80h 10h page program confirm code busy first page second page (can be repeated up to 63 times) address inputs data inputs address inputs data inputs
27/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b block erase erase operations are done one block at a time. an erase operation sets all of the bits in the ad- dressed block to ?1?. all previous data in the block is lost. an erase operation consists of three steps (refer to figure 16. ): 1. one bus cycle is required to setup the block erase command. only addresses a18-a27 (x8) or a17-a26 (x16) are used, the other address inputs are ignored. 2. two or three bus cycles are then required to load the address of the block to be erased. refer to table 8. and table 9. for the block addresses of each device. 3. one bus cycle is required to issue the block erase confirm command to start the p/e/r controller. the operation is initiated on the rising edge of write enable, w , after the confirm command is is- sued. the p/e/r controller handles block erase and implements the verify process. during the block erase operation, only the read status register and reset commands will be ac- cepted, all other commands will be ignored. once the program operation has completed the p/ e/r controller bit sr6 is set to ?1? and the ready/ busy signal goes high. if the operation completed successfully, the write status bit sr0 is ?0?, other- wise it is set to ?1?. figure 16. block erase operation reset the reset command is used to reset the com- mand interface and status register. if the reset command is issued during any operation, the op- eration will be aborted. if it was a program or erase operation that was aborted, the contents of the memory locations being modified will no longer be valid as the data will be partially programmed or erased. if the device has already been reset then the new reset command will not be accepted. the ready/busy signal goes low for t blbh4 after the reset command is issued. the value of t blbh4 depends on the operation that the device was per- forming when the command was issued, refer to table 25. for the values. i/o rb block address inputs sr0 ai07593 d0h 70h 60h block erase setup code confirm code read status register busy tblbh3 (erase busy time)
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 28/57 read status register the device contains a status register which pro- vides information on the current or previous pro- gram or erase operation. the various bits in the status register convey information and errors on the operation. the status register is read by issuing the read status register command. the status register in- formation is present on the output data bus (i/o0- i/o7) on the fallin g edge of chip enable or read enable, whichever occurs last. when several memories are connected in a system, the use of chip enable and read enable signals allows the system to poll each device separately, even when the ready/busy pins are common-wired. it is not necessary to toggle the chip enable or read en- able signals to update the contents of the status register. after the read status register command has been issued, the device remains in read status register mode until another command is issued. therefore if a read status register command is issued during a random read cycle a new read command must be issued to continue with a page read operation. the status register bits are summarized in table 13., status register bits , . refer to table 13. in conjunction with the following text descriptions. write protection bit (sr7). the write protection bit can be used to identify if the device is protected or not. if the write protection bit is set to ?1? the de- vice is not protected and program or erase opera- tions are allowed. if the write protection bit is set to ?0? the device is protected and program or erase operations are not allowed. p/e/r controller and cache ready/busy bit (sr6). status register bit sr6 has two different functions depending on the current operation. during cache program operations sr6 acts as a cache program ready/busy bit, which indicates whether the cache register is ready to accept new data. when sr6 is set to '0', the cache reg- ister is busy and when sr6 is set to '1', the cache register is ready to accept new data. during all other operations sr6 acts as a p/e/r con- troller bit, which indicates whether the p/e/r con- troller is active or inactive. when the p/e/r controller bit is set to ?0?, the p/e/r controller is active (device is busy); when the bit is set to ?1?, the p/e/r controller is inactive (device is ready). p/e/r controller bit (sr5). the program/erase/ read controller bit indicates whether the p/e/r controller is active or inactive. when the p/e/r controller bit is set to ?0?, the p/e/r controller is active (device is busy); when the bit is set to ?1?, the p/e/r controller is inactive (device is ready). cache program error bit (sr1). the cache pro- gram error bit can be used to identify if the previous page (page n-1) has been successfully pro- gramed or not in a cache program operation. sr1 is set to ?1? when the cache program operation has failed to program the previous page (page n- 1) correctly. if sr1 is set to ?0? the operation has completed successfully. the cache program error bit is only valid during cache program operations, during other opera- tions it is don?t care. error bit (sr0). the error bit is used to identify if any errors have been detected by the p/e/r con- troller. the error bit is set to ?1? when a program or erase operation has failed to write the correct data to the memory. if the error bit is set to ?0? the oper- ation has completed successfully. the error bit sr0, in a cache program operation, indicates a failure on page n. sr4, sr3 and sr2 are reserved.
29/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b table 13. status register bits note: 1. the sr6 bit and sr0 bit have a different meaning during cache program and cache read operations. 2. only valid for cache program operations, for other operations it is same as sr6. 3. only valid for cache program operations, for other operations it is don?t care. bit name logic level definition sr7 write protection '1' not protected '0' protected sr6 (1) program/ erase/ read controller '1' p/e/r c inactive, device ready '0' p/e/r c active, device busy cache ready/busy '1' cache register ready (cache program only) '0' cache register busy (cache program only) sr5 program/ erase/ read controller (2) '1' p/e/r c inactive, device ready '0' p/e/r c active, device busy sr4, sr3, sr2 reserved don?t care sr1 cache program error (3) '1' page n-1 failed in cache program operation '0' page n-1 programmed successfully sr0 (1) generic error ?1? error ? operation failed ?0? no error ? operation successful cache program error ?1? page n failed in cache program operation ?0? page n programmed successfully
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 30/57 read electronic signature the device contains a manufacturer code and de- vice code. to read these codes three steps are re- quired: 1. one bus write cycle to issue the read electronic signature command (90h) 2. one bus write cycle to input the address (00h) 3. four bus read cycles to sequentially output the data (as shown in table 14., electronic signature ). table 14. electronic signature part number byte/word 1 byte/word 2 byte/word 3 byte/word 4 manufacturer code device code nand01gr3b 20h a1h reserved 80h page size spare area size sequential access time block size organization (see table 15. ) nand01gw3b f1h nand01gr4b 0020h b1h nand01gw4b c1h nand02gr3b 20h aah nand02gw3b dah nand02gr4b 0020h bah nand02gw4b cah nand04gr3b 20h ach nand04gw3b dch nand04gr4b 0020h bch nand04gw4b cch nand08gr3b 20h a3h nand08gw3b d3h nand08gr4b 0020h b3h nand08gw4b c3h
31/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b table 15. electronic signature byte/word 4 note: 1. v ddth is equal to 2.5v for 3v power supply devices and to 1.5v for 1.8v power supply devices. i/o definition value description i/o1-i/o0 page size (without spare area) 0 0 0 1 1 0 1 1 1k 2k reserved reserved i/o2 spare area size (byte / 512 byte) 0 1 8 16 i/o3 sequential access time 0 1 standard (50 ns) fast (30 ns) i/o5-i/o4 block size (without spare area) 0 0 0 1 1 0 1 1 64k 128k 256k reserved i/o6 organization 0 1 x8 x16 i/o7 not used reserved
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 32/57 data protection the device has both hardware and software fea- tures to protect against program and erase opera- tions. it features a write protect, wp , pin, which can be used to protect the device against program and erase operations. it is recommended to keep wp at v il during power-up and power-down. in addition, to protect the memory from any invol- untary program/erase oper ations during power- transitions, the device has an internal voltage de- tector which disables all functions whenever v cc is below 1.5v. the device features a block lock mode, which is enabled by setting the power-up read enable, lock/unlock enable, prl, signal to high. the block lock mode has two levels of software protection. blocks lock/unlock blocks lock-down refer to figure 19. for an overview of the protec- tion mechanism. blocks lock all the blocks are locked simultaneously by issuing a blocks lock command (see table 10. ). all blocks are locked afte r power-up and when the write protect signal is low. once all the blocks are locked, one sequence of consecutive blocks can be unlocked by using the blocks unlock command. refer to figure 24., command latch ac wave- forms for details on how to issue the command. blocks unlock a sequence of c onsecutive lock ed blocks can be unlocked, to allow program or erase operations, by issuing an blocks unlock command (see table 10. ). the blocks unlock command consists of four steps: one bus cycle to setup the command two or three bus cycles to give the start block address (refer to table 8. , table 9. and figure 17. ) one bus cycle to confirm the command two or three bus cycles to give the end block address (refer to table 8. , table 9. and figure 17. ). the start block address must be nearer the logi- cal lsb (least significant bit) than end block ad- dress. if the start block address is the same as the end block address, only one block is unlocked. only one consecutive area of blocks can be un- locked at any one time. it is not possible to unlock multiple areas. figure 17. blocks unlock operation note: three address cycles are required for 2,4 and 8 gb devices. 1gb devices only require two address cycles. i/o wp start block address, 3 cycles ai08670 23h blocks unlock command add1 add2 add3 24h add1 add2 add3 end block address, 3 cycles
33/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b blocks lock-down the lock-down feature provides an additional lev- el of protection. a locked-down block cannot be unlocked by a software command. locked-down blocks can only be unlocked by setting the write protect signal to low for a minimum of 100ns. only locked blocks can be locked-down. the com- mand has no affect on unlocked blocks. refer to figure 24., command latch ac wave- forms for details on how to issue the command. block lock status in block lock mode (prl high) the block lock status of each block can be checked by issuing a read block lock status command (see table 10. ). the command consists of: one bus cycle to gi ve the command code three bus cysles to give the block address after this, a read cycle will then output the block lock status on the i/o pins on the falling edge of chip enable or read enable, whichever occurs last. chip enable or read enable do not need to be toggled to update the status. the read block lock status command will not be accepted while the device is busy (rb low). the device will remain in read block lock status mode until another command is issued. figure 18. read block lock status operation note: three address cycles are required for 2,4 and 8 gb devices. 1gb devices only require two address cycles. table 16. block lock status note: x = don?t care. status i/o7-i/o3 i/o2 i/o1 i/o0 locked x 0 1 0 unlocked x 1 1 0 locked-down x 0 0 1 unlocked in locked- down area x101 i/o r block address, 3 cycles ai08669 7ah read block lock status command add1 add2 add3 dout block lock status twhrl w
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 34/57 figure 19. block protection state diagram note: prl must be high for the software commands to be accepted. ai08663c locked locked-down unlocked in locked area power-up block unlock command blocks lock-down command wp v il >100ns blocks lock command wp v il >100ns (start + end block address) unlocked in locked-down area blocks lock-down command wp v il >100ns
35/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b software algorithms this section gives information on the software al- gorithms that st recommends to implement to manage the bad blocks and extend the lifetime of the nand device. nand flash memories are programmed and erased by fowler-nordheim tunneling using a high voltage. exposing the device to a high voltage for extended periods can cause the oxide layer to be damaged. for this reason, the number of program and erase cycles is limited (see table 18. for val- ue) and it is recommended to implement garbage collection, a wear-leveling algorithm and an er- ror correction code, to extend the number of pro- gram and erase cycles and increase the data retention. to help integrate a nand memory into an applica- tion st microelectronics can provide: a demo board with nand simulation software for pcs file system os native reference software, which supports the basic commands of file management. contact the nearest st microelectronics sales of- fice for more details. bad block management devices with bad blocks have the same quality level and the same ac and dc characteristics as devices where all the blocks are valid. a bad block does not affect the performance of valid blocks be- cause it is isolated from the bit line and common source line by a select transistor. the devices are supplied with all the locations in- side valid blocks erased (ffh). the bad block in- formation is written prior to shipping. any block, where the 1st and 6th bytes, or 1st word, in the spare area of the 1st page, does not contain ffh, is a bad block. the bad block information must be read before any erase is attempted as the bad block informa- tion may be erased. for the system to be able to recognize the bad blocks based on the original in- formation it is recommended to create a bad block table following the flowchart shown in figure 20. block replacement over the lifetime of the device additional bad blocks may develop. in this case the block has to be replaced by copying the data to a valid block. these additional bad blocks can be identified as attempts to program or erase them will give errors in the status register. as the failure of a page program operation does not affect the data in other pages in the same block, the block can be replaced by re-program- ming the current data and copying the rest of the replaced block to an available valid block. the copy back program command can be used to copy the data to a valid block. see the ? copy back program ? section for more de- tails. refer to table 17. for the recommended proce- dure to follow if an error occurs during an opera- tion. table 17. block failure figure 20. bad block management flowchart operation recommended procedure erase block replacement program block replacement or ecc read ecc ai07588c start end no yes yes no block address = block 0 data = ffh? last block? increment block address update bad block table
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 36/57 figure 21. garbage collection garbage collection when a data page needs to be modified, it is faster to write to the first available page, and the previous page is marked as invalid. after several updates it is necessary to remove invalid pages to free some memory space. to free this memory space and allow further pro- gram operations it is recommended to implement a garbage collection algorithm. in a garbage col- lection software the valid pages are copied into a free area and the block containing the invalid pag- es is erased (see figure 21. ). wear-leveling algorithm for write-intensive applications, it is recommend- ed to implement a wear-leveling algorithm to monitor and spread the number of write cycles per block. in memories that do not use a wear-leveling al- gorithm not all blocks get used at the same rate. blocks with long-lived data do not endure as many write cycles as the blocks with frequently-changed data. the wear-leveling algorithm ensures that equal use is made of all the available write cycles for each block. there are two wear-leveling levels: first level wear-leveling, new data is programmed to the free blocks that have had the fewest write cycles second level wear-leveling, long-lived data is copied to another block so that the original block can be used for more frequently- changed data. the second level wear-leveling is triggered when the difference between the maximum and the min- imum number of write cycles per block reaches a specific threshold. error correction code an error correction code (ecc) can be imple- mented in the nand flash memories to identify and correct errors in the data. for every 2048 bits in the device it is recommend- ed to implement 22 bits of ecc (16 bits for line par- ity plus 6 bits for column parity). an ecc model is available in vhdl or verilog. contact the nearest st microelectronics sales of- fice for more details. figure 22. error detection valid page invalid page free page (erased) old area ai07599b new area (after gc) new ecc generated during read xor previous ecc with new ecc all results = zero? 22 bit data = 0 yes 11 bit data = 1 no 1 bit data = 1 correctable error ecc error no error ai08332 >1 bit = zero? yes no
37/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b hardware simulation models behavioral simulation models. denali software corporation models are platform independent functional models designed to assist customers in performing entire system simulations (typical vhdl/verilog). these models describe the logic behavior and timings of nand flash devices, and so allow software to be developed before hard- ware. ibis simulations models. ibis (i/o buffer infor- mation specification) models describe the behav- ior of the i/o buffers and electrical characteristics of flash devices. these models provide information such as ac characteristics, rise/fall times and package me- chanical data, all of which are measured or simu- lated at voltage and temperature ranges wider than those allowed by target specifications. ibis models are used to simulate pcb connec- tions and can be used to resolve compatibility is- sues when upgrading devices. they can be imported into spicetools.
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 38/57 program and erase times and endurance cycles the program and erase times and the number of program/ erase cycles per block are shown in ta- ble 18. table 18. program, erase times and program erase endurance cycles maximum rating stressing the device above the ratings listed in ta- ble 19., absolute maximum ratings , may cause permanent damage to the device. these are stress ratings only and operation of the device at these or any other conditions above those indicat- ed in the operating sections of this specification is not implied. exposure to absolute maximum rat- ing conditions for extended periods may affect de- vice reliability. refer also to the stmicroelectronics sure program and other rel- evant quality documents. table 19. absolute maximum ratings note: 1. minimum voltage may undershoot to ?2v for less than 20ns during transitions on input and i/o pins. maximum voltage may o ver- shoot to v dd + 2v for less than 20ns during transitions on i/o pins. 2. compatibility with lead-free soldering processes in accordance with ecopack 7191395 specifications. not exceeding 250c for more than 10s, and peaking at 260c. parameters nand flash unit min typ max page program time 300 700 s block erase time 2 3ms program/erase cycles (per block) 100,000 cycles data retention 10 years symbol parameter value unit min max t bias temperature under bias ? 50 125 c t stg storage temperature ? 65 150 c t lead lead temperature during soldering (2) 260 c v io (1) input or output voltage 1.8v devices ? 0.6 2.7 v 3 v devices ? 0.6 4.6 v v dd supply voltage 1.8v devices ? 0.6 2.7 v 3 v devices ? 0.6 4.6 v
39/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b dc and ac parameters this section summarizes the operating and mea- surement conditions, and the dc and ac charac- teristics of the device. the parameters in the dc and ac characteristics tables that follow, are de- rived from tests performed under the measure- ment conditions summarized in table 20., operating and ac measurement conditions . designers should check that the operating condi- tions in their circuit match the measurement condi- tions when relying on the quoted parameters. table 20. operating and ac measurement conditions table 21. capacitance note: 1. t a = 25c, f = 1 mhz. c in and c i/o are not 100% tested 2. input/output capacitances double in stacked devices table 22. dc characteristics, 1.8v devices parameter nand flash units min max supply voltage (v dd ) 1.8v devices 1.7 1.95 v 3v devices 2.7 3.6 v ambient temperature (t a ) grade 1 0 70 c grade 6 ?40 85 c load capacitance (c l ) (1 ttl gate and c l ) 1.8v devices 30 pf 3v devices (2.7 - 3.6v) 50 pf input pulses voltages 1.8v devices 0 v dd v 3v devices 0.4 2.4 v input and output timing ref. voltages 1.8v devices 0.9 v 3v devices 1.5 v output circuit resistor r ref 8.35 k ? input rise and fall times 5 ns symbol parameter test condition typ max unit c in input capacitance v in = 0v 10 pf c i/o input/output capacitance (2) v il = 0v 10 pf symbol parameter test conditions min ty p max unit i dd1 operating current sequential read t rlrl minimum e =v il, i out = 0 ma - 8 15 ma i dd2 program - - 8 15 ma i dd3 erase - - 8 15 ma i dd5 standby current (cmos) (1) e =v dd -0.2, wp =0/v dd - 10 50 a i li input leakage current (1) v in = 0 to v dd max - - 10 a i lo output leakage current (1) v out = 0 to v dd max - - 10 a v ih input high voltage - v dd -0.4 - v dd +0.3 v
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 40/57 note: 1. leakage current and standby current double in stacked devices figure 23. equivalent testing circuit for ac characteristics measurement v il input low voltage - -0.3 - 0.4 v v oh output high voltage level i oh = -100a v dd -0.1 - - v v ol output low voltage level i ol = 100a - - 0.1 v i ol (rb ) output low current (rb ) v ol = 0.1v 3 4 ma v lko v dd supply voltage (erase and program lockout) - - - 1.1 v symbol parameter test conditions min ty p max unit ai11085 nand flash c l 2r ref v dd 2r ref gnd gnd
41/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b table 23. dc characteristics, 3v devices note: 1. leakage current and standby current double in stacked devices symbol parameter test conditions min ty p max unit i dd1 operating current sequential read t rlrl minimum e =v il, i out = 0 ma - 15 30 ma i dd2 program - - 15 30 ma i dd3 erase - - 15 30 ma i dd4 standby current (ttl) (1) e=v ih , wp =0/v dd 1 ma i dd5 standby current (cmos) (1) e =v dd -0.2, wp =0/v dd - 10 50 a i li input leakage current (1) v in = 0 to v dd max - - 10 a i lo output leakage current (1) v out = 0 to v dd max - - 10 a v ih input high voltage - v dd +0.8 - v dd +0.3 v v il input low voltage - -0.3 - v dd +0.2 v v oh output high voltage level i oh = -400a 2.4 - - v v ol output low voltage level i ol = 2.1ma - - 0.4 v i ol (rb ) output low current (rb ) v ol = 0.4v 8 10 ma v lko v dd supply voltage (erase and program lockout) - - - 1.7 v
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 42/57 table 24. ac characteristics for command, address, data input note: 1. if t elwl is less than 10ns, t wlwh must be minimum 35ns, otherwise, t wlwh may be minimum 25ns. symbol alt. symbol parameter 1.8v devices 3v devices unit t allwl t als address latch low to write enable low al setup time min 0 0 ns t alhwl address latch high to write enable low t clhwl t cls command latch high to write enable low cl setup time min 0 0 ns t cllwl command latch low to write enable low t dvwh t ds data valid to write enable high data setup time min 20 20 ns t elwl t cs chip enable low to write enable low e setup time min 0 0 ns t whalh t alh write enable high to address latch high al hold time min 10 10 ns t whclh t clh write enable high to command latch high cl hold time min 10 10 ns t whcll write enable high to command latch low t whdx t dh write enable high to data transition data hold time min 10 10 ns t wheh t ch write enable high to chip enable high e hold time min 10 10 ns t whwl t wh write enable high to write enable low w high hold time min 20 20 ns t wlwh t wp write enable low to write enable high w pulse width min 25 (1) 25 (1) ns t wlwl t wc write enable low to write enable low write cycle time min 60 50 ns
43/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b table 25. ac characteristics for operations note: 1. the time to ready depends on the value of the pull-up resistor tied to the ready/busy pin. see figures 34 , 35 and 36 . 2. to break the sequential read cycle, e must be held high for longer than t ehel . 3. es = electronic signature. symbol alt. symbol parameter 1.8v devices 3v devices unit t allrl1 t ar address latch low to read enable low read electronic signature min 10 10 ns t allrl2 read cycle min 10 10 ns t bhrl t rr ready/busy high to read enable low min 20 20 ns t blbh1 ready/busy low to ready/busy high read busy time max 25 25 s t blbh2 t prog program busy time max 700 700 s t blbh3 t bers erase busy time max 3 3 ms t blbh4 reset busy time, during ready max 5 5 s t blbh5 t cbsy cache busy time typ 3 3 s max 700 700 s t whbh1 t rst write enable high to ready/busy high reset busy time, during read max 5 5 s reset busy time, during program max 10 10 s reset busy time, during erase max 500 500 s t cllrl t clr command latch low to read enable low min 10 10 ns t dzrl t ir data hi-z to read enable low min 0 0 ns t ehqz t chz chip enable high to output hi-z max 20 20 ns t elqv t cea chip enable low to output valid max 45 45 ns t rhrl t reh read enable high to read enable low read enable high hold time min 20 20 ns t ehqx t oh chip enable high or read enable high to output hold min 15 15 ns t rhqx t rlrh t rp read enable low to read enable high read enable pulse width min 25 25 ns t rlrl t rc read enable low to read enable low read cycle time min 60 50 ns t rlqv t rea read enable low to output valid read enable access time max 35 35 ns read es access time (3) t whbh t r write enable high to ready/busy high read busy time max 25 25 s t whbl t wb write enable high to ready/busy low max 100 100 ns t whrl t whr write enable high to read enable low min 60 60 ns t wlwl t wc write enable low to write enable low write cycle time min 60 50 ns
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 44/57 figure 24. command latch ac waveforms figure 25. address latch ac waveforms note: a fifth address cycle is required for 2gb, 4gb and 8gb devices. ai08028 cl e w al i/o tclhwl telwl twhcll twheh twlwh tallwl twhalh command tdvwh twhdx (cl setup time) (cl hold time) (data setup time) (data hold time) (alsetup time) (al hold time) (e setup time) (e hold time) ai08029 cl e w al i/o twlwh telwl twlwl tcllwl twhwl talhwl tdvwh twlwl twlwl twlwh twlwh twlwh twhwl twhwl twhdx twhall tdvwh twhdx tdvwh twhdx tdvwh twhdx twhall adrress cycle 1 twhall (al setup time) (al hold time) adrress cycle 4 adrress cycle 3 adrress cycle 2 (cl setup time) (data setup time) (data hold time) (e setup time)
45/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b figure 26. data input latch ac waveforms note: data in last is 2112 in x8 devices and 1056 in x16 devices. figure 27. sequential data output after read ac waveforms note: 1. cl = low, al = low, w = high. twhclh cl e al w i/o tallwl twlwl twlwh twheh twlwh twlwh data in 0 data in 1 data in last tdvwh twhdx tdvwh twhdx tdvwh twhdx ai08030 (data setup time) (data hold time) (alsetup time) (cl hold time) (e hold time) e ai08031 r i/o rb trlrl trlqv trhrl trlqv data out data out data out trhqz tbhrl trlqv trhqz tehqz (read cycle time) (r accesstime) (r high holdtime)
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 46/57 figure 28. read status register ac waveform figure 29. read electronic signature ac waveform note: 1. refer to table 14. for the values of the manufacturer and device codes, and to table 15. for the information contained in byte4. telwl tdvwh status register output 70h/ 72h/ 73h/ 74h/ 75h cl e w r i/o tclhwl twhdx twlwh twhcll tcllrl tdzrl trlqv tehqz trhqz twhrl telqv twheh ai08666 (data setup time) (data hold time) 90h 00h man. code device code cl e w al r i/o trlqv read electronic signature command 1st cycle address ai08667 (read es access time) tallrl1 00h byte4 byte3 byte1 byte2 see note.1
47/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b figure 30. page read operation ac waveform note: a fifth address cycle is required for 2gb, 4gb and 8gb devices. tehel cl e w al r i/o rb twlwl twhbl tallrl2 00h data n data n+1 data n+2 data last trhbl tehbh twhbh trlrl tehqz trhqz ai08660 busy command code address n input data output from address n to last byte or word in page add.n cycle 1 add.n cycle 4 add.n cycle 3 add.n cycle 2 (read cycle time) trlrh tblbh1 30h
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 48/57 figure 31. page program ac waveform note: a fifth address cycle is required for 2gb, 4gb and 8gb devices. cl e w al r i/o rb sr0 ai08668 n last 10h 70h 80h page program setup code confirm code read status register twlwl twlwl twlwl twhbl tblbh2 page program address input data input add.n cycle 1 add.n cycle 4 add.n cycle 3 add.n cycle 2 (write cycle time) (program busy time)
49/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b figure 32. block erase ac waveform note: address cycle 3 is required for 2gb, 4gb and 8gb devices only. figure 33. reset ac waveform d0h 60h sr0 70h ai08038b twhbl twlwl tblbh3 block erase setup command block erase cl e w al r i/o rb confirm code read status register block address input (erase busy time) (write cycle time) add. cycle 1 add. cycle 3 add. cycle 2 w r i/o rb tblbh4 al cl ffh ai08043 (reset busy time)
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 50/57 ready/busy signal electrical characteristics figures 35 , 34 and 36 show the electrical charac- teristics for the ready/busy signal. the value re- quired for the resistor r p can be calculated using the following equation: so, where i l is the sum of the input currents of all the devices tied to the ready/busy signal. r p max is determined by the maximum value of t r . figure 34. ready/busy ac waveform figure 35. ready/busy load circuit figure 36. resistor value versus waveform timings for ready/busy signal note: t = 25c. r p min v ddmax v olmax ? () i ol i l + ----------------------------------------------------------- - = r p min 1.8v () 1.85v 3ma i l + --------------------------- = r p min 3v () 3.2v 8ma i l + --------------------------- = ai07564b busy v oh ready v dd v ol t f t r ai07563b r p v dd v ss rb device open drain output ibusy ai07565b r p (k ?) 12 34 100 300 200 t r , t f (ns) 1 2 3 1.7 0.85 30 1.7 1.7 1.7 1.7 t r t f ibusy 0 400 4 r p (k ?) 12 34 100 300 200 1 2 3 ibusy (ma) 2.4 1.2 0.8 0.6 100 200 300 400 3.6 3.6 3.6 3.6 0 400 4 v dd = 1.8v, c l = 30pf v dd = 3.3v, c l = 100pf t r , t f (ns) ibusy (ma) 60 90 120 0.57 0.43
51/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b data protection the st nand device is designed to guarantee data protection during power transitions. a v dd detection circuit disables all nand opera- tions, if v dd is below the v lko threshold. in the v dd range from v lko to the lower limit of nominal range, the wp pin should be kept low (v il ) to guarantee hardware protection during power transitions as shown in the below figure. figure 37. data protection ai11086 v lko v dd w nominal range locked locked
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 52/57 package mechanical figure 38. tsop48 - 48 lead plastic thin small outline, 12 x 20 mm, package outline note: drawing is not to scale. table 26. tsop48 - 48 lead plastic thin small outline, 12 x 20 mm, package mechanical data symbol millimeters inches typ min max typ min max a 1.200 0.0472 a1 0.100 0.050 0.150 0.0039 0.0020 0.0059 a2 1.000 0.950 1.050 0.0394 0.0374 0.0413 b 0.220 0.170 0.270 0.0087 0.0067 0.0106 c 0.100 0.210 0.0039 0.0083 cp 0.080 0.0031 d1 12.000 11.900 12.100 0.4724 0.4685 0.4764 e 20.000 19.800 20.200 0.7874 0.7795 0.7953 e1 18.400 18.300 18.500 0.7244 0.7205 0.7283 e 0.500 ? ? 0.0197 ? l 0.600 0.500 0.700 0.0236 0.0197 0.0276 l1 0.800 0.0315 3 0 5 3 0 5 tsop-g b e die c l a1 e1 e a a2 1 24 48 25 d1 l1 cp
53/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b figure 39. vfbga63 9.5x12mm - 6x8 active ball array, 0.80mm pitch, package outline note: drawing is not to scale table 27. vfbga63 9.5x12mm - 6x8 active ball array, 0.80mm pitch, package mechanical data symbol millimeters inches typ min max typ min max a 1.05 0.0413 a1 0.25 0.0098 a2 0.70 0.0276 b 0.45 0.40 0.50 0.0177 0.0157 0.0197 d 9.50 9.40 9.60 0.3740 0.3701 0.3780 d1 4.00 0.1575 d2 7.20 0.2835 ddd 0.10 0.0039 e 12.00 11.90 12.10 0.4724 0.4685 0.4764 e1 5.60 0.2205 e2 8.80 0.3465 e 0.80 ? ? 0.0315 ? ? fd 2.75 0.1083 fd1 1.15 0.0453 fe 3.20 0.1260 fe1 1.60 0.0630 sd 0.40 0.0157 se 0.40 0.0157 e eb sd se a2 a1 a bga-z67 ddd fd1 d2 e2 e fe fe1 e e1 d1 fd ball "a1"
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 54/57 figure 40. tfbga63 9.5x12mm - 6x8 active ball array, 0.80mm pitch, package outline note: drawing is not to scale table 28. tfbga63 9.5x12mm - 6x8 active ball array, 0.80mm pitch, package mechanical data symbol millimeters inches typ min max typ min max a 1.20 0.0472 a1 0.25 0.0098 a2 0.80 0.0315 b 0.45 0.40 0.50 0.0177 0.0157 0.0197 d 9.50 9.40 9.60 0.3740 0.3701 0.3780 d1 4.00 0.1575 d2 7.20 0.2835 ddd 0.10 0.0039 e 12.00 11.90 12.10 0.4724 0.4685 0.4764 e1 5.60 0.2205 e2 8.80 0.3465 e 0.80 ? ? 0.0315 ? ? fd 2.75 0.1083 fd1 1.15 0.0453 fe 3.20 0.1260 fe1 1.60 0.0630 sd 0.40 0.0157 se 0.40 0.0157 e d eb sd se a2 a1 a bga-z67 ddd fd1 d2 e2 e fe fe1 e e1 d1 fd ball "a1"
55/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b part numbering table 29. ordering information scheme devices are shipped from the factory with the memory content bits, in valid blocks, erased to ?1?. for further information on any aspect of this device, please contact your nearest st sales office. example: nand02gr3b 2 a za 1 t device type nand flash memory density 01g = 1gb 02g = 2gb 04g = 4gb 08g = 8gb operating voltage r = v dd = 1.7 to 1.95v w = v dd = 2.7 to 3.6v bus width 3 = x8 4 = x16 family identifier b = 2112 bytes/ 1056 word page device options 2 = chip enable don't care enabled product version a = first version b= second version c= third version package n = tsop48 12 x 20mm (all devices) za = vfbga63 9.5 x 12 x 1mm, 0.8mm pitch (1gb devices) zb = tfbga63 9.5 x 12 x 1.2mm, 0.8mm pitch (2gb dual die devices) temperature range 1 = 0 to 70 c 6 = ?40 to 85 c option blank = standard packing t = tape & reel packing e = lead free package, standard packing f = lead free package, tape & reel packing
nand01g-b, nand02g-b, NAND04G-B, nand08g-b 56/57 revision history table 30. document revision history date version revision details 25-feb-2005 1 first issue 16-aug-2005 2 automatic page 0 read feature removed throughout document. lfbga63 package removed throughout document. data protection section and figure 23., equivalent testing circuit for ac characteris- tics measurement added. tfbga63 and vfbga63 packages updated. note added to figure 4., tsop48 connections, x8 devices and figure 5., tsop48 connections, x16 devices regarding the usop package. write enable (w). , table 11. , table 12. , table 14. , block lock status , figure 19. , table 20. , table 22. , table 23. , table 25. and table 30. modified. 18-oct-2005 3 512 device and usop package removed throughout document. figure 4. , figure 5. , table 22. , table 23. and copy back program modified.
57/57 nand01g-b, nand02g-b, NAND04G-B, nand08g-b information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of NAND04G-B

	To Download NAND04G-B Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .